VBT1045CBP-E3/8W datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
SOT-23
VBT1045CBP-E3/8W Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Supplier Device Package
TO-263AB
Packaging
Tape & Reel (TR)
Published
2011
Series
TMBS®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Base Part Number
VBT1045C
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
500μA @ 45V
Voltage - Forward (Vf) (Max) @ If
580mV @ 5A
Forward Current
10A
Max Reverse Leakage Current
500μA
Operating Temperature - Junction
200°C Max
Max Surge Current
100A
Voltage - DC Reverse (Vr) (Max)
45V
Current - Average Rectified (Io)
5A
Max Reverse Voltage (DC)
45V
Average Rectified Current
5A
Peak Reverse Current
500μA
Max Repetitive Reverse Voltage (Vrrm)
45V
Peak Non-Repetitive Surge Current
100A
Diode Configuration
1 Pair Common Cathode
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$0.77468
$619.744
VBT1045CBP-E3/8W Product Details
VBT1045CBP-E3/8W Overview
A surge current should be monitored and should not exceed 100A.There will be no operation of this device when the forward voltage is set to 10A.Powered by reverse voltage, this device has a peak voltage of 500μA.The maximum reverse leakage current from this semiconductor is 500μA, which corresponds to the reverse leakage current from that device when reverse biased.
VBT1045CBP-E3/8W Features
a peak voltage of 500μA a reverse voltage peak of 500μA
VBT1045CBP-E3/8W Applications
There are a lot of Vishay Semiconductor Diodes Division VBT1045CBP-E3/8W applications of rectifier diode array.