VBT2080C-E3/4W Description

VBT2080C-E3/4W Dual Trench MOS Barrier Schottky Rectifier. The Schottky diode, also known as the Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes.

VBT2080C-E3/4W Features

Trench MOS Schottky technology

Low forward voltage drop, low power losses

High-efficiency operation

Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

VBT2080C-E3/4W Applications

High-frequency converters

Switching power supplies

Freewheeling diodes

OR-ing diode

DC/DC converters 

Reverse battery protection