VFT1045CBP-M3/4W datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
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VFT1045CBP-M3/4W Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Number of Pins
3
Supplier Device Package
ITO-220AB
Packaging
Tube
Published
2011
Series
TMBS®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
500μA @ 45V
Voltage - Forward (Vf) (Max) @ If
580mV @ 5A
Forward Current
10A
Max Reverse Leakage Current
500μA
Operating Temperature - Junction
200°C Max
Max Surge Current
100A
Voltage - DC Reverse (Vr) (Max)
45V
Current - Average Rectified (Io)
5A
Forward Voltage
580mV
Max Reverse Voltage (DC)
45V
Average Rectified Current
5A
Peak Reverse Current
500μA
Max Repetitive Reverse Voltage (Vrrm)
45V
Peak Non-Repetitive Surge Current
100A
Diode Configuration
1 Pair Common Cathode
Max Forward Surge Current (Ifsm)
100A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
VFT1045CBP-M3/4W Product Details
VFT1045CBP-M3/4W Overview
Devices that have a forward voltage of 580mV will operate.Array should be a rule to monArrayor the surge current and not allow Array to exceed 100A.There will be no operation of this device when the forward voltage is set to 10A.Array is powered by a reverse voltage peak of 500μA.When reverse biased, its maximal reverse leakage current is 500μA, which is the current flowing from that semiconductor device.
VFT1045CBP-M3/4W Features
580mV forward voltage a peak voltage of 500μA a reverse voltage peak of 500μA
VFT1045CBP-M3/4W Applications
There are a lot of Vishay Semiconductor Diodes Division VFT1045CBP-M3/4W applications of rectifier diode array.