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VS-10ETF06-M3

VS-10ETF06-M3

VS-10ETF06-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 10A TO220AC

SOT-23

VS-10ETF06-M3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-2
Number of Pins 2
Diode Element Material SILICON
Packaging Tube
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Number of Elements 1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 100μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 10A
Case Connection CATHODE
Forward Current 10A
Operating Temperature - Junction -40°C~150°C
Application FAST SOFT RECOVERY
Max Reverse Voltage (DC) 600V
Average Rectified Current 10A
Number of Phases 1
Reverse Recovery Time 200 ns
Peak Reverse Current 100μA
Max Repetitive Reverse Voltage (Vrrm) 600V
Max Forward Surge Current (Ifsm) 160A
Height 8.76mm
Length 10.54mm
Width 4.57mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $2.36220 $2.3622

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