VS-10ETF10-M3

new-10%

Manufacturer part number:VS-10ETF10-M3

Manufacturer:Vishay Semiconductor Diodes Division

Description:DIODE GEN PURP 1KV 10A TO220AC

Case Package:SOT-23

Datasheet:VS-10ETF10-M3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount, Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-2
Number of Pins	3
Diode Element Material	SILICON
Packaging	Tube
Published	2015
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Additional Feature	FREE WHEELING DIODE
HTS Code	8541.10.00.80
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT APPLICABLE
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT APPLICABLE
JESD-30 Code	R-PSFM-T2
Number of Elements	1
Element Configuration	Common Cathode
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	100μA @ 1000V
Voltage - Forward (Vf) (Max) @ If	1.33V @ 10A
Forward Current	10A
Operating Temperature - Junction	-40°C~150°C
Application	FAST SOFT RECOVERY
Voltage - DC Reverse (Vr) (Max)	1000V
Max Reverse Voltage (DC)	1kV
Average Rectified Current	10A
Number of Phases	1
Reverse Recovery Time	310 ns
Peak Reverse Current	100μA
Max Repetitive Reverse Voltage (Vrrm)	1.2kV
JEDEC-95 Code	TO-220AC
Peak Non-Repetitive Surge Current	155A
RoHS Status	ROHS3 Compliant