VS-10ETF12S-M3 datasheet pdf and Diodes - Rectifiers - Single product details from Vishay Semiconductor Diodes Division stock available on our website
SOT-23
VS-10ETF12S-M3 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Additional Feature
FREE WHEELING DIODE
HTS Code
8541.10.00.80
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
100μA @ 1200V
Voltage - Forward (Vf) (Max) @ If
1.33V @ 10A
Forward Current
10A
Operating Temperature - Junction
-40°C~150°C
Application
FAST SOFT RECOVERY
Voltage - DC Reverse (Vr) (Max)
1200V
Max Reverse Voltage (DC)
1.2kV
Average Rectified Current
10A
Number of Phases
1
Reverse Recovery Time
310 ns
Peak Reverse Current
100μA
Max Repetitive Reverse Voltage (Vrrm)
1.2kV
Peak Non-Repetitive Surge Current
155A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.98381
$0.98381
VS-10ETF12S-M3 Product Details
VS-10ETF12S-M3 Overview
This device's average rectified current is zero volts.Forward current is allowed to reach a value of zero.Using the data chart, the peak reverse is 100μA in the datasheets.
VS-10ETF12S-M3 Features
an average rectified current of 10A volts the peak reverse is 100μA
VS-10ETF12S-M3 Applications
There are a lot of Vishay Semiconductor Diodes Division VS-10ETF12S-M3 applications of single-phase diode rectifier.