VS-10ETF12STRL-M3

new-10%

Manufacturer part number:VS-10ETF12STRL-M3

Manufacturer:Vishay Semiconductor Diodes Division

Description:DIODE GEN PURP 1.2KV 10A D2PAK

Case Package:SOT-23

Datasheet:VS-10ETF12STRL-M3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Diode Element Material	SILICON
Packaging	Tube
Published	2010
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Additional Feature	FREE WHEELING DIODE
HTS Code	8541.10.00.80
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	100μA @ 1200V
Voltage - Forward (Vf) (Max) @ If	1.33V @ 10A
Case Connection	CATHODE
Forward Current	10A
Operating Temperature - Junction	-40°C~150°C
Application	FAST SOFT RECOVERY
Voltage - DC Reverse (Vr) (Max)	1200V
Max Reverse Voltage (DC)	1.2kV
Average Rectified Current	10A
Number of Phases	1
Reverse Recovery Time	310 ns
Peak Reverse Current	100μA
Max Repetitive Reverse Voltage (Vrrm)	1.2kV
Max Forward Surge Current (Ifsm)	160A
Height	3.69mm
Length	10.16mm
Width	9.08mm
RoHS Status	ROHS3 Compliant