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VS-10ETS10S-M3

VS-10ETS10S-M3

VS-10ETS10S-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 10A D2PAK

SOT-23

VS-10ETS10S-M3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.80
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 50μA @ 1000V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 10A
Case Connection CATHODE
Operating Temperature - Junction -40°C~150°C
Application HIGH VOLTAGE
Voltage - DC Reverse (Vr) (Max) 1000V
Max Reverse Voltage (DC) 1kV
Average Rectified Current 10A
Number of Phases 1
Non-rep Pk Forward Current-Max 160A
Reverse Current-Max 50μA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.73211 $0.73211

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