VS-112CNQ030APBF datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
SOT-23
VS-112CNQ030APBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
D-61-8
Number of Pins
3
Supplier Device Package
D-61-8
Packaging
Bulk
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Base Part Number
112CNQ030
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
3.5mA @ 30V
Voltage - Forward (Vf) (Max) @ If
490mV @ 55A
Forward Current
110A
Max Reverse Leakage Current
3.5mA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
5.1kA
Voltage - DC Reverse (Vr) (Max)
30V
Current - Average Rectified (Io)
55A
Max Reverse Voltage (DC)
30V
Average Rectified Current
55A
Peak Reverse Current
3.5mA
Max Repetitive Reverse Voltage (Vrrm)
30V
Peak Non-Repetitive Surge Current
5.1kA
Diode Configuration
1 Pair Common Cathode
Natural Thermal Resistance
0.3 °C/W
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$16.14000
$16.14
10
$14.96900
$149.69
100
$12.88980
$1288.98
VS-112CNQ030APBF Product Details
VS-112CNQ030APBF Overview
Keeping the surge current under 5.1kA and preventing it from exceeding it should be the rule.A forward voltage of 110A will enable the device to operate.A reverse voltage peak of 3.5mA is used to power devices like this one.The maximum reverse leakage current from a semiconductor device when reverse biased is 3.5mA.
VS-112CNQ030APBF Features
a peak voltage of 3.5mA a reverse voltage peak of 3.5mA
VS-112CNQ030APBF Applications
There are a lot of Vishay Semiconductor Diodes Division VS-112CNQ030APBF applications of rectifier diode array.