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VS-1N2129RA

VS-1N2129RA

VS-1N2129RA

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 60A DO203AB

SOT-23

VS-1N2129RA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Chassis, Stud
Mounting Type Chassis, Stud Mount
Package / Case DO-203AB, DO-5, Stud
Diode Element Material SILICON
Packaging Bulk
Published 2017
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 1
ECCN Code EAR99
Terminal Finish Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature 190°C
Min Operating Temperature -65°C
Additional Feature LOW LEAKAGE CURRENT
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position UPPER
Terminal Form SOLDER LUG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 1N2129
JESD-30 Code O-MUPM-D1
Number of Elements 1
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard, Reverse Polarity
Current - Reverse Leakage @ Vr 10mA @ 100V
Voltage - Forward (Vf) (Max) @ If 1.3V @ 188A
Case Connection ANODE
Operating Temperature - Junction -65°C~200°C
Max Surge Current 900A
Application POWER
Max Reverse Voltage (DC) 100V
Average Rectified Current 60A
Number of Phases 1
Peak Reverse Current 10mA
Reverse Voltage 100V
Natural Thermal Resistance 0.25 °C/W
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $6.19440 $619.44

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