VS-2EFH02-M3/I

new-10%

Manufacturer part number:VS-2EFH02-M3/I

Manufacturer:Vishay Semiconductor Diodes Division

Description:DIODE GEN PURP 200V 2A DO219AB

Case Package:SOT-23

Datasheet:VS-2EFH02-M3/I Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DO-219AB
Number of Pins	2
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2015
Series	FRED Pt®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
Additional Feature	FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
HTS Code	8541.10.00.80
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	2μA @ 200V
Voltage - Forward (Vf) (Max) @ If	950mV @ 2A
Forward Current	2A
Operating Temperature - Junction	-65°C~175°C
Output Current-Max	2A
Application	HYPERFAST SOFT RECOVERY
Max Reverse Voltage (DC)	200V
Average Rectified Current	2A
Number of Phases	1
Reverse Recovery Time	25 ns
Peak Reverse Current	8μA
Max Repetitive Reverse Voltage (Vrrm)	200V
Height	1.08mm
Length	2.9mm
Width	1.9mm
RoHS Status	ROHS3 Compliant