VS-30CTQ080PBF datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
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VS-30CTQ080PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tube
Published
2011
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN OVER NICKEL
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Additional Feature
FREE WHEELING DIODE
Terminal Position
SINGLE
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
550μA @ 80V
Voltage - Forward (Vf) (Max) @ If
860mV @ 15A
Forward Current
30A
Max Reverse Leakage Current
550μA
Operating Temperature - Junction
-55°C~175°C
Max Surge Current
850A
Application
GENERAL PURPOSE
Current - Average Rectified (Io)
15A
Number of Phases
1
Peak Reverse Current
550μA
Max Repetitive Reverse Voltage (Vrrm)
80V
JEDEC-95 Code
TO-220AB
Peak Non-Repetitive Surge Current
850A
Diode Configuration
1 Pair Common Cathode
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
VS-30CTQ080PBF Product Details
VS-30CTQ080PBF Overview
Keeping the surge current under 850A and preventing it from exceeding it should be the rule.In the case of 30A forward voltage, the device will operate.Powered by reverse voltage, this device has a peak voltage of 550μA.The maximum reverse leakage current from a semiconductor device when reverse biased is 550μA.
VS-30CTQ080PBF Features
a peak voltage of 550μA a reverse voltage peak of 550μA
VS-30CTQ080PBF Applications
There are a lot of Vishay Semiconductor Diodes Division VS-30CTQ080PBF applications of rectifier diode array.