Name: VS-30CTQ080SPBF
Brand: Vishay Semiconductor Diodes Division
SKU: VS-30CTQ080SPBF
Availability: InStock

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VS-30CTQ080SPBF

Manufacturer part number:VS-30CTQ080SPBF

Manufacturer:Vishay Semiconductor Diodes Division

Description:VS-30CTQ080SPBF datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website

Case Package:SOT-23

Datasheet:VS-30CTQ080SPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Diode Element Material	SILICON
Packaging	Tube
Published	2016
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Additional Feature	FREEWHEELING DIODE, HIGH RELIABILITY
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	2
Element Configuration	Common Cathode
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Schottky
Current - Reverse Leakage @ Vr	550μA @ 80V
Voltage - Forward (Vf) (Max) @ If	1.05V @ 30A
Forward Current	30A
Max Reverse Leakage Current	550μA
Operating Temperature - Junction	175°C Max
Max Surge Current	850A
Application	HIGH POWER
Max Reverse Voltage (DC)	80V
Average Rectified Current	15A
Number of Phases	1
Peak Reverse Current	550μA
Max Repetitive Reverse Voltage (Vrrm)	80V
Peak Non-Repetitive Surge Current	850A
Diode Configuration	1 Pair Common Cathode
RoHS Status	ROHS3 Compliant

VS-30CTQ080SPBF Product Details

VS-30CTQ080SPBF Overview

We should be monitoring the surge current and keeping it below 850A.In this case, the forward voltage has to be set at 30A to operate the device.In devices such as this one, reverse voltage peak is set at 550μA.This semiconductor device's maximal reverse leakage current is 550μA kA, which is its reverse leakage current when reverse biased.