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VS-86HFR80

VS-86HFR80

VS-86HFR80

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 8A DO203AB

SOT-23

VS-86HFR80 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Chassis, Stud
Mounting Type Chassis, Stud Mount
Package / Case DO-203AB, DO-5, Stud
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 1
ECCN Code EAR99
Terminal Finish Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature 180°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form SOLDER LUG
JESD-30 Code O-MUPM-D1
Number of Elements 1
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard, Reverse Polarity
Current - Reverse Leakage @ Vr 9mA @ 800V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 267A
Forward Current 85A
Operating Temperature - Junction -65°C~180°C
Max Surge Current 1.8kA
Application GENERAL PURPOSE
Current - Average Rectified (Io) 8A
Forward Voltage 1.2V
Max Reverse Voltage (DC) 800V
Average Rectified Current 85A
Number of Phases 1
Peak Reverse Current 9mA
Max Repetitive Reverse Voltage (Vrrm) 800V
Peak Non-Repetitive Surge Current 1.8kA
Reverse Voltage 800V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $12.98780 $1298.78

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