VS-GA200TH60S

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Manufacturer part number:VS-GA200TH60S

Manufacturer:Vishay Semiconductor Diodes Division

Description:IGBT 600V 260A 1042W INT-A-PAK

Case Package:SOT-23

Datasheet:VS-GA200TH60S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	Double INT-A-PAK (3 + 4)
Operating Temperature	-40°C~150°C TJ
Published	2015
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Nickel (Ni)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	1.042kW
Number of Elements	1
Configuration	Half Bridge
Power - Max	1042W
Input	Standard
Collector Emitter Voltage (VCEO)	1.9V
Max Collector Current	260A
Current - Collector Cutoff (Max)	5μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	13.1nF
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 200A (Typ)
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	13.1nF @ 25V
RoHS Status	ROHS3 Compliant