VS-SD800C30L

new-10%

Manufacturer part number:VS-SD800C30L

Manufacturer:Vishay Semiconductor Diodes Division

Description:DIODE GEN PURP 3KV 1180A DO200AB

Case Package:SOT-23

Datasheet:VS-SD800C30L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Chassis Mount
Mounting Type	Clamp On
Package / Case	DO-200AB, B-PUK
Diode Element Material	SILICON
Packaging	Bulk
Published	2007
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
HTS Code	8541.10.00.80
Terminal Position	END
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	SD800C*L
JESD-30 Code	O-CEDB-N2
Number of Elements	1
Element Configuration	Single
Speed	Standard Recovery >500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	50mA @ 3000V
Voltage - Forward (Vf) (Max) @ If	1.66V @ 2000A
Forward Current	1.18kA
Max Surge Current	14.24kA
Output Current-Max	1180A
Application	HIGH VOLTAGE HIGH POWER
Voltage - DC Reverse (Vr) (Max)	3000V
Current - Average Rectified (Io)	1180A
Max Reverse Voltage (DC)	3kV
Average Rectified Current	1.18kA
Number of Phases	1
Peak Reverse Current	50mA
Reverse Voltage	3kV
RoHS Status	ROHS3 Compliant