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4N35-X006

4N35-X006

4N35-X006

Vishay Semiconductor Opto Division

4N35-X006 datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from Vishay Semiconductor Opto Division stock available on our website

SOT-23

4N35-X006 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 6-DIP (0.400, 10.16mm)
Number of Pins 6
Supplier Device Package 6-DIP
Operating Temperature -55°C~100°C
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 100°C
Min Operating Temperature -55°C
Max Power Dissipation 150mW
Base Part Number 4N35
Voltage - Isolation 5000Vrms
Output Voltage 30V
Output Type Transistor with Base
Number of Elements 1
Number of Channels 1
Power Dissipation 150mW
Voltage - Forward (Vf) (Typ) 1.2V
Input Type DC
Forward Current 60mA
Max Output Voltage 30V
Output Current per Channel 50mA
Forward Voltage 1.5V
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
Current - Output / Channel 50mA
Reverse Breakdown Voltage 6V
Voltage - Output (Max) 30V
Max Input Current 60mA
Current - DC Forward (If) (Max) 60mA
Current Transfer Ratio (Min) 100% @ 10mA
Turn On / Turn Off Time (Typ) 10μs, 10μs
Current Transfer Ratio 50 %
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.21450 $0.429

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