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4N35-X017T

4N35-X017T

4N35-X017T

Vishay Semiconductor Opto Division

4N35-X017T datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from Vishay Semiconductor Opto Division stock available on our website

SOT-23

4N35-X017T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Gull Wing
Number of Pins 6
Supplier Device Package 6-SMD
Operating Temperature -55°C~100°C
Packaging Tape & Reel (TR)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 100°C
Min Operating Temperature -55°C
Max Power Dissipation 150mW
Base Part Number 4N35
Voltage - Isolation 5000Vrms
Output Voltage 30V
Output Type Transistor with Base
Number of Elements 1
Number of Channels 1
Voltage 6V
Power Dissipation 150mW
Voltage - Forward (Vf) (Typ) 1.2V
Input Type DC
Forward Current 60mA
Max Output Voltage 30V
Output Current per Channel 50mA
Forward Voltage 1.2V
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
Current - Output / Channel 50mA
Reverse Breakdown Voltage 6V
Voltage - Output (Max) 30V
Max Input Current 60mA
Current - DC Forward (If) (Max) 60mA
Current Transfer Ratio (Min) 100% @ 10mA
Turn On / Turn Off Time (Typ) 10μs, 10μs
Current Transfer Ratio 50 %
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.27600 $0.276

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