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IRC540PBF

IRC540PBF

IRC540PBF

Vishay Siliconix

Trans MOSFET N-CH 100V 28A 5-Pin(5+Tab) TO-220

SOT-23

IRC540PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-5
Supplier Device Package TO-220-5
Weight 3.000003g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1997
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 28A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 150W Tc
Power Dissipation 150W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Rise Time 77ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 48 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 1.3nF
FET Feature Current Sensing
Drain to Source Resistance 77mOhm
Rds On Max 77 mΩ
Height 9.02mm
Length 10.67mm
Width 4.83mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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