IRF9Z14

new-10%

Manufacturer part number:IRF9Z14

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 60V 6.7A TO-220AB

Case Package:SOT-23

Datasheet:IRF9Z14 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Weight	6.000006g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Current Rating	-6.7A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	43W Tc
Element Configuration	Single
Power Dissipation	43W
Turn On Delay Time	11 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6.7A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	63ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	-6.7A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Input Capacitance	270pF
Drain to Source Resistance	500mOhm
Rds On Max	500 mΩ
Nominal Vgs	-4 V
Height	9.01mm
Length	10.41mm
Width	4.7mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead