IRFB18N50K

new-10%

Manufacturer part number:IRFB18N50K

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 500V 17A TO-220AB

Case Package:SOT-23

Datasheet:IRFB18N50K Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Weight	6.000006g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	220W Tc
Element Configuration	Single
Power Dissipation	220W
Turn On Delay Time	22 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2830pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Rise Time	60ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	17A
Gate to Source Voltage (Vgs)	30V
Input Capacitance	2.83nF
Drain to Source Resistance	290mOhm
Rds On Max	290 mΩ
Height	9.01mm
Length	10.41mm
Width	4.7mm
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant