IRFBG30 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website
SOT-23
IRFBG30 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
1kV
Technology
MOSFET (Metal Oxide)
Current Rating
3.1A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
125W Tc
Element Configuration
Single
Power Dissipation
125W
Turn On Delay Time
12 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
980pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3.1A Tc
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Rise Time
25ns
Drain to Source Voltage (Vdss)
1000V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
89 ns
Continuous Drain Current (ID)
3.1A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
1kV
Input Capacitance
980pF
Drain to Source Resistance
5Ohm
Rds On Max
5 Ω
Nominal Vgs
4 V
Height
9.01mm
Length
10.41mm
Width
4.7mm
REACH SVHC
Unknown
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
IRFBG30 Product Details
IRFBG30 Description
The IRFBG30 is a Third generation Power MOSFET from Vishay that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.