IRFD210

new-10%

Manufacturer part number:IRFD210

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 600MA 4-DIP

Case Package:SOT-23

Datasheet:IRFD210 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2017
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	600mA
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Ta
Power Dissipation	1W
Turn On Delay Time	8.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.5Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 25V
Current - Continuous Drain (Id) @ 25°C	600mA Ta
Gate Charge (Qg) (Max) @ Vgs	8.2nC @ 10V
Rise Time	17ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	600mA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	140pF
Drain to Source Resistance	1.5Ohm
Rds On Max	1.5 Ω
Height	3.37mm
Length	5mm
Width	6.29mm
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead