IRFD210PBF

new-10%

Manufacturer part number:IRFD210PBF

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 600MA 4-DIP

Case Package:SOT-23

Datasheet:IRFD210PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	1.5Ohm
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Current Rating	600mA
Pin Count	4
JESD-30 Code	R-PDIP-T3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
Case Connection	DRAIN
Turn On Delay Time	8.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 360mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 25V
Current - Continuous Drain (Id) @ 25°C	600mA Ta
Gate Charge (Qg) (Max) @ Vgs	8.2nC @ 10V
Rise Time	17ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	600mA
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.6A
Drain to Source Breakdown Voltage	200V
Height	3.37mm
Length	5mm
Width	6.29mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free