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IRFI520GPBF

IRFI520GPBF

IRFI520GPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 270mOhm @ 4.3A, 10V ±20V 360pF @ 25V 16nC @ 10V 100V TO-220-3 Full Pack, Isolated Tab

SOT-23

IRFI520GPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Number of Pins 3
Supplier Device Package TO-220-3
Weight 6.000006g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 270mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 37W Tc
Element Configuration Single
Power Dissipation 37W
Turn On Delay Time 8.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 270mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.2A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 7.2A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 360pF
Drain to Source Resistance 270mOhm
Rds On Max 270 mΩ
Height 9.8mm
Length 10.63mm
Width 4.83mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.674083 $2.674083
10 $2.522720 $25.2272
100 $2.379925 $237.9925
500 $2.245212 $1122.606
1000 $2.118124 $2118.124
IRFI520GPBF Product Details

IRFI520GPBF Overview


The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 19 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 270mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8.8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRFI520GPBF Features


a continuous drain current (ID) of 7.2A
the turn-off delay time is 19 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)


IRFI520GPBF Applications


There are a lot of Vishay Siliconix
IRFI520GPBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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