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IRFP22N50A

IRFP22N50A

IRFP22N50A

Vishay Siliconix

MOSFET N-CH 500V 22A TO-247AC

SOT-23

IRFP22N50A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 277W Tc
Element Configuration Single
Turn On Delay Time 26 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 230mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 94ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 47 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 3.45nF
Drain to Source Resistance 230mOhm
Rds On Max 230 mΩ
Height 20.7mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
RoHS Status Non-RoHS Compliant

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