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IRFPS43N50KPBF

IRFPS43N50KPBF

IRFPS43N50KPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 90mOhm @ 28A, 10V ±30V 8310pF @ 25V 350nC @ 10V 500V TO-274AA

SOT-23

IRFPS43N50KPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-274AA
Number of Pins 3
Supplier Device Package SUPER-247™ (TO-274AA)
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 78mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 47A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 540W Tc
Element Configuration Single
Power Dissipation 540W
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 90mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8310pF @ 25V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 350nC @ 10V
Rise Time 140ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 74 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 47A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Input Capacitance 8.31nF
Drain to Source Resistance 78mOhm
Rds On Max 90 mΩ
Height 20.8mm
Length 16.1mm
Width 5.3mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.262965 $4.262965
10 $4.021665 $40.21665
100 $3.794024 $379.4024
500 $3.579268 $1789.634
1000 $3.376668 $3376.668
IRFPS43N50KPBF Product Details

IRFPS43N50KPBF Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8310pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 47A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 55 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 78mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFPS43N50KPBF Features


a continuous drain current (ID) of 47A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 78mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IRFPS43N50KPBF Applications


There are a lot of Vishay Siliconix
IRFPS43N50KPBF applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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