SI1021R-T1-E3

new-10%

Manufacturer part number:SI1021R-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 60V 190MA SC-75A

Case Package:SOT-23

Datasheet:SI1021R-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-75A
Number of Pins	3
Supplier Device Package	SC-75A
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	4Ohm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	250mW Ta
Element Configuration	Single
Power Dissipation	250mW
Turn On Delay Time	20 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	23pF @ 25V
Current - Continuous Drain (Id) @ 25°C	190mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.7nC @ 15V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	-190mA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Input Capacitance	23pF
Drain to Source Resistance	8Ohm
Rds On Max	4 Ω
Height	700μm
Length	1.58mm
Width	760μm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free