SI1034X-T1-GE3

new-10%

Manufacturer part number:SI1034X-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 20V 0.18A SC89-6

Case Package:SOT-23

Datasheet:SI1034X-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	3
Weight	32.006612mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	10Ohm
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Powers
Max Power Dissipation	250mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI1034
Pin Count	6
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
Turn On Delay Time	50 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C	180mA
Gate Charge (Qg) (Max) @ Vgs	0.75nC @ 4.5V
Rise Time	25ns
Fall Time (Typ)	25 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	200mA
Gate to Source Voltage (Vgs)	5V
Drain Current-Max (Abs) (ID)	0.18A
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	1.2 V
Height	600μm
Length	1.7mm
Width	1.2mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free