SI1039X-T1-GE3

new-10%

Manufacturer part number:SI1039X-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 12V 0.95A 0.21W 165mohm @ 4.5V

Case Package:SOT-23

Datasheet:SI1039X-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	LOW THRESHOLD
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Power Dissipation-Max	170mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	15 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	165m Ω @ 870mA, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	870mA Ta
Gate Charge (Qg) (Max) @ Vgs	6nC @ 4.5V
Rise Time	20ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	870mA
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.87A
Drain to Source Breakdown Voltage	-12V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant