SI1056X-T1-E3

new-10%

Manufacturer part number:SI1056X-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 1.32A SOT563F

Case Package:SOT-23

Datasheet:SI1056X-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Supplier Device Package	SC-89-6
Weight	32.006612mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	236mW Ta
Element Configuration	Single
Turn On Delay Time	6.8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	89mOhm @ 1.32A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	8.7nC @ 5V
Rise Time	19ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	1.32A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
Input Capacitance	400pF
Drain to Source Resistance	89mOhm
Rds On Max	89 mΩ
Height	600μm
Length	1.7mm
Width	1.2mm
RoHS Status	ROHS3 Compliant