SI1072X-T1-E3

new-10%

Manufacturer part number:SI1072X-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 1.3A SOT563F

Case Package:SOT-23

Datasheet:SI1072X-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Supplier Device Package	SC-89-6
Weight	32.006612mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	93mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	236mW Ta
Element Configuration	Single
Power Dissipation	236μW
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	93mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 10V
Rise Time	31ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	9 ns
Continuous Drain Current (ID)	1.3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	280pF
Drain to Source Resistance	93mOhm
Rds On Max	93 mΩ
Height	600μm
Length	1.7mm
Width	1.2mm
RoHS Status	ROHS3 Compliant