SI1303DL-T1-GE3

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Manufacturer part number:SI1303DL-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 670MA SOT323-3

Case Package:SOT-23

Datasheet:SI1303DL-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN (SN)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Power Dissipation-Max	290mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	290mW
Turn On Delay Time	9 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	430m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	670mA Ta
Gate Charge (Qg) (Max) @ Vgs	2.2nC @ 4.5V
Rise Time	31ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	12.5 ns
Continuous Drain Current (ID)	-720mA
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	0.67A
Drain to Source Breakdown Voltage	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant