SI1403BDL-T1-GE3 Overview

The drain current is the maximum continuous current the device can conduct, and this device has 1.4A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 28 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.Normal operation requires that the DS breakdown voltage remain above 20V.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.

SI1403BDL-T1-GE3 Features

a continuous drain current (ID) of 1.4A
the turn-off delay time is 28 ns
a 20V drain to source voltage (Vdss)

SI1403BDL-T1-GE3 Applications

There are a lot of Vishay Siliconix
SI1403BDL-T1-GE3 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies