SI2314EDS-T1-E3

new-10%

Manufacturer part number:SI2314EDS-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 3.77A SOT23-3

Case Package:SOT-23

Datasheet:SI2314EDS-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	33mOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	750mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	750mW
Turn On Delay Time	530 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	33m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	3.77A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V
Rise Time	1.4μs
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	1.4 μs
Turn-Off Delay Time	13.5 μs
Continuous Drain Current (ID)	4.9A
Threshold Voltage	950mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Nominal Vgs	950 mV
Height	1.02mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free