SI2335DS-T1-GE3

new-10%

Manufacturer part number:SI2335DS-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 12V 4.0A 1.25W 51mohm @ 4.5V

Case Package:SOT-23

Datasheet:SI2335DS-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	750mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	750mW
Turn On Delay Time	13 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	51m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds	1225pF @ 6V
Current - Continuous Drain (Id) @ 25°C	3.2A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	3.2A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.051Ohm
Drain to Source Breakdown Voltage	12V
RoHS Status	ROHS3 Compliant