SI2369DS-T1-GE3

new-10%

Manufacturer part number:SI2369DS-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET -30V [email protected] -7.6A P-CH

Case Package:SOT-23

Datasheet:SI2369DS-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	1.25W Ta 2.5W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25W
Turn On Delay Time	13 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	29m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1295pF @ 15V
Current - Continuous Drain (Id) @ 25°C	7.6A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	-5.4A
Threshold Voltage	-1.2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	7.6A
Drain-source On Resistance-Max	0.029Ohm
Drain to Source Breakdown Voltage	-30V
Max Junction Temperature (Tj)	150°C
Height	1.12mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant