SI3483DV-T1-GE3

new-10%

Manufacturer part number:SI3483DV-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 6.2A 2.0W 35mohm @ 10V

Case Package:SOT-23

Datasheet:SI3483DV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Pure Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	6
Number of Elements	1
Power Dissipation-Max	1.14W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.14W
Turn On Delay Time	10 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 6.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	4.7A Ta
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	71 ns
Continuous Drain Current (ID)	4.7A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.035Ohm
Drain to Source Breakdown Voltage	30V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant