SI4200DY-T1-GE3

new-10%

Manufacturer part number:SI4200DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 25 Volts 8 Amps 2.8 Watts

Case Package:SOT-23

Datasheet:SI4200DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Max Power Dissipation	2W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Power - Max	2.8W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 7.3A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	415pF @ 13V
Current - Continuous Drain (Id) @ 25°C	8A
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	10ns
Fall Time (Typ)	8 ns
Continuous Drain Current (ID)	7.3A
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	8A
Drain to Source Breakdown Voltage	25V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant