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SI4462DY-T1-GE3

SI4462DY-T1-GE3

SI4462DY-T1-GE3

Vishay Siliconix

MOSFET 200V 1.5A 2.5W 480mohm @ 10V

SOT-23

SI4462DY-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.15A Ta
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 1.5A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1.15A
DS Breakdown Voltage-Min 200V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

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