SI4472DY-T1-GE3

new-10%

Manufacturer part number:SI4472DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 150V 7.7A 8-SOIC

Case Package:SOT-23

Datasheet:SI4472DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.1W Ta 5.9W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1735pF @ 50V
Current - Continuous Drain (Id) @ 25°C	7.7A Tc
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	8V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	7.7A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.047Ohm
Drain to Source Breakdown Voltage	150V
Nominal Vgs	4.5 V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free