SI4833BDY-T1-GE3

new-10%

Manufacturer part number:SI4833BDY-T1-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET P-CH 30V 3.8A 8-Pin SO T/R

Case Package:SOT-23

Datasheet:SI4833BDY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SOIC
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	LITTLE FOOT®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.75W Tc
Power Dissipation	1.75W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	68mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.6A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	3.8A
Gate to Source Voltage (Vgs)	20V
FET Feature	Schottky Diode (Isolated)
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free