SI4848DY-T1-E3

new-10%

Manufacturer part number:SI4848DY-T1-E3

Manufacturer:Vishay Siliconix

Description:Si4848DY Series 150 V 3.7 A 0.85 Ohm Surface Mount N-Channel Mosfet - SOIC-8

Case Package:SOT-23

Datasheet:SI4848DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	85mOhm
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	85m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	2.7A Ta
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	3.7A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	2.7A
Drain to Source Breakdown Voltage	150V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	2 V
Height	1.75mm
Length	4.9784mm
Width	3.9878mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free