SI4850EY-T1

new-10%

Manufacturer part number:SI4850EY-T1

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 60V 6A 8-SOIC

Case Package:SOT-23

Datasheet:SI4850EY-T1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	506.605978mg
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.7W Ta
Element Configuration	Single
Power Dissipation	1.7W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	6A Ta
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Forward Voltage	800mV
Fall Time (Typ)	10 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	22mOhm
Rds On Max	22 mΩ
Height	1.55mm
Length	5mm
Width	4mm
RoHS Status	ROHS3 Compliant