SI4862DY-T1-E3

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Manufacturer part number:SI4862DY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 16V 17A 8-SOIC

Case Package:SOT-23

Datasheet:SI4862DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.6W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.6W
Turn On Delay Time	42 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.3m Ω @ 25A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	17A Ta
Gate Charge (Qg) (Max) @ Vgs	70nC @ 4.5V
Rise Time	38ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	120 ns
Continuous Drain Current (ID)	17A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.0033Ohm
Drain to Source Breakdown Voltage	16V
Height	1.55mm
Length	5mm
Width	4mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant