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SI4886DY-T1-GE3

SI4886DY-T1-GE3

SI4886DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 9.5A 8-SOIC

SOT-23

SI4886DY-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Power Dissipation-Max 1.56W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.95W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 800mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 9.5A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 9.5A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.01Ohm
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant

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