SI5429DU-T1-GE3

new-10%

Manufacturer part number:SI5429DU-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY SI5429DU-T1-GE3 MOSFET Transistor, P Channel, 12 A, -30 V, 0.0122 ohm, -10 V, -1 V

Case Package:SOT-23

Datasheet:SI5429DU-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® ChipFET™ Dual
Number of Pins	8
Packaging	Cut Tape (CT)
Published	2013
Series	TrenchFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	31W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	31W
Turn On Delay Time	35 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	15m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2320pF @ 15V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Rise Time	50ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-30V
Height	850μm
Length	3.08mm
Width	1.98mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant