SI5441DC-T1-E3

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Manufacturer part number:SI5441DC-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 3.9A 1206-8

Case Package:SOT-23

Datasheet:SI5441DC-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.3W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	55m Ω @ 3.9A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	3.9A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 4.5V
Rise Time	35ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	3.9A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.055Ohm
Drain to Source Breakdown Voltage	-20V
RoHS Status	ROHS3 Compliant