SI5449DC-T1-GE3

new-10%

Manufacturer part number:SI5449DC-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 30V 3.1A 1206-8

Case Package:SOT-23

Datasheet:SI5449DC-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	1206-8 ChipFET™
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	85mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.3W Ta
Element Configuration	Single
Power Dissipation	1.3W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	85mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	3.1A Ta
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	3.1A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	85mOhm
Rds On Max	85 mΩ
RoHS Status	ROHS3 Compliant