SI5482DU-T1-E3

new-10%

Manufacturer part number:SI5482DU-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 12A PPAK CHIPFET

Case Package:SOT-23

Datasheet:SI5482DU-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® ChipFET™ Single
Supplier Device Package	PowerPAK® ChipFet Single
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	3.1W Ta 31W Tc
Element Configuration	Single
Turn On Delay Time	5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	15mOhm @ 7.4A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1610pF @ 15V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	51nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Input Capacitance	1.61nF
Drain to Source Resistance	15mOhm
Rds On Max	15 mΩ
Height	750μm
Length	3mm
Width	1.9mm
RoHS Status	ROHS3 Compliant